Compact Noise Modeling Approach in Nano-scaled CSDG MOSFET for RF Switch

Study on RF Characteristics and Modeling of Scaled MOSFET

A New Backscattering Model for Nano-MOSFET Compact Modeling

For fast computation of drain current in Nano-MOSFET, we have developed a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel. The main elements of this model are deduced from careful analysis of transport in devices using Monte Carlo simulation. The backscattering coefficient is in very good agreement with the results of ...

Mosfet Modeling for Rf Circuit Design

In this paper, we discuss some important issues in MOSFET modeling for radio-frequency (RF) integratedcircuit (IC) design. We start with the introduction of the basics of RF modeling. A simple sub-circuit model is presented with comparisons of the data for both y parameter and fT characteristics. Good model accuracy is achieved against the measurements for a 0.25μm RF CMOS technology. The high ...

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

A quantum mechanical modeling framework for ultrathin body (UTB) device operating in the subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electrodes. Hence, the charge is neglected in Poisson equation, thus decoupling the quantum effects and electrostatics in the body. T...

RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction

In this paper, a BSIMSOI RF gate resistance model for FDSOI MOSFET is introduced and verified. With the addition of the gate resistance model, the RF characteristic of FDSOI MOSFET could be modeled well. Self-heating effect (SHE) will affect RF data fitting significantly. A simple method to extract thermal resistance is proposed.